SI9424DY |
RFQ for SI9424DY Required Field |
 |
| Technical/Catalog Information | SI9424DY |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 8A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 2260pF @ 10V |
| Power - Max | 1W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 33nC @ 5V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SI9424DY SI9424DY SI9424DYCT ND SI9424DYCTND SI9424DYCT |
| Product | Manufacturers | Pack | D/C |
| SI9424DY | - | - | - |
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Typical Application |
Features |
| • DC/DC converter• Load switch• Battery Protection | • -8.0 A, -20 V. RDS(on) = 0.024 W @ VGS = -4.5 V RDS(on) = 0.032 W @ VGS = -2.5 V.• Low gate charge (23nC typical).• Fast switching speed.• High performance trench technology for extremely low RDS(ON).• High power and current handling capability. |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
-20 |
V |
|
VGSS |
Gate-Source Voltage |
±10 |
V |
|
ID |
Drain Current - Continuous (Note 1a) - Pulsed |
-8.0 |
A |
|
-50 | |||
|
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 |
W |
|
1.2 | |||
|
1 |
